NXP Semiconductors
Product data sheet
High-speed diodes
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
IN4531
IN4532
C
d
diode capacitance
IN4531
IN4532
t
rr
reverse recovery time
IN4531
IN4532
reverse recovery time
IN4532
V
fr
forward recovery voltage
when switched from I
F
= 10 mA to
I
R
= 60 mA; R
L
= 100
Ω;
measured
at I
R
= 1 mA; see Fig.7
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured
at I
R
= 1 mA; see Fig.7
when switched from I
F
= 100 mA;
t
r
≤
30 ns; see Fig.8
see Fig.5
V
R
= 20 V
V
R
= 20 V; T
j
= 150
°C
V
R
= 50 V
V
R
= 50 V; T
j
= 150
°C
f = 1 MHz; V
R
= 0; see Fig.6
CONDITIONS
I
F
= 10 mA; see Fig.3
1N4531; 1N4532
MIN.
−
−
−
−
−
−
−
−
−
−
−
MAX.
1 000
25
50
100
100
4
2
4
2
4
3
UNIT
mV
nA
µA
nA
µA
pF
pF
ns
ns
ns
V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a printed circuit-board without metallization pad.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length 5 mm
lead length 5 mm; note 1
VALUE
120
350
UNIT
K/W
K/W
1996 Sep 03
3
PHILIPS [ NXP SEMICONDUCTORS ]
