NXP Semiconductors
Product data sheet
High-speed diodes
FEATURES
•
Hermetically sealed leaded glass
SOD68 (DO-34) package
•
High switching speed: max. 4 ns
•
Continuous reverse voltage:
max. 75 V
•
Repetitive peak reverse voltage:
max. 75 V
•
Repetitive peak forward current:
max. 450 mA.
The diodes are type branded.
1N4531; 1N4532
DESCRIPTION
The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar
technology, and encapsulated in hermetically sealed leaded glass
SOD68 (DO-34) packages.
k
handbook, halfpage
a
MAM156
APPLICATIONS
•
High-speed switching
•
Protection diodes in reed relays.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
V
R
I
F
I
FRM
I
FSM
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 1 ms
t=1s
P
tot
T
stg
T
j
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C
−
−
−
−
−65
−
4
1
0.5
500
+200
200
A
A
A
mW
°C
°C
see Fig.2
CONDITIONS
MIN.
−
−
−
−
MAX.
75
75
200
450
V
V
mA
mA
UNIT
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
1996 Sep 03
2
PHILIPS [ NXP SEMICONDUCTORS ]
