3.7.3
RF power transistors for aerospace and defense
Device naming conventions RF power transistors for aerospace and defense
B L S 6 G 2731 S -120 G
option: gullwing shaped leads
P1dB power
S: earless package
P: pallet
frequency
band
(in 100MHz; here: 2700-3100)
G: standard LDMOS (≤ 28V)
H: high voltage LDMOS (50V)
LDMOS technology generation
A: avionics frequency band operation
L: L-band frequency operation
S: S-band frequency operation
L: high frequency power transistor
B: semiconductor die made of Si
Why choose NXP’s microwave RF power transistors
`
High gain
`
High efficiency
`
Highest reliability
`
Improved pulse droop and insertion phase
`
Improved ruggedness - overdrive without risk to +5 dB
`
Reduces component count and helps simplify L- and S-band radar design
`
Uses non-toxic, RoHS-compliant packages
3.7.3.1 Avionics LDMOS transistors
Type
BLA1011(S)-200R
BLU6H0410L(S)-600P
Product
Driver
f
min
(MHz)
1030
1030
1030
1030
1030
960
1030
960
1030
400
f
max
(MHz)
1090
1090
1090
1090
1090
1215
1090
1215
1090
1000
P1dB
(W)
2
10
200
200
200
250
300
500
600
600
VDS
(V)
36
36
36
28
28
36
32
50
48
50
P
L
(W)
2
10
200
200
200
250
300
450
600
600
η
D
(%)
-
40
50
65
65
50
57
50
52
57
G
p
(dB)
16
16
15
20
20
13.5
16.5
17
17
20
Test signal
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
Package
Final
3.7.3.2 L-band LDMOS transistors
Type
BLL6H0514L(S)-130
BLL6H1214L(S)-250
BLL6H1214(LS)-500
Product
Driver
f
min
(MHz)
500
1200
500
1200
1200
1200
1200
f
max
(MHz)
1400
1400
1400
1400
1400
1400
1400
P1dB
(W)
25
35
130
250
250
250
500
VDS
(V)
50
36
50
36
36
50
50
P
L
(W)
25
35
130
250
250
250
500
η
D
(%)
50
43
50
47
45
55
50
G
p
(dB)
19
13
17
13
15
17
17
Test signal
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
Package
Final
Bold red
= new, highly recommended product
100
NXP Semiconductors RF Manual 16
th
edition
PHILIPS [ NXP SEMICONDUCTORS ]
