3.7.3.3 S-band LDMOS transistors
Type
BLS6G3135(S)-20
BLS6G2735L(S)-30
BLS6G2731(S)-120
BLS6G3135(S)-120
BLS7G2729L(S)-350P
BLS7G3135L(S)-350P
Product
Driver
f
min
(MHz)
2700
3100
2700
2900
2300
2700
3100
2700
2900
2900
2700
3100
f
max
(MHz)
3100
3500
3500
3300
2500
3100
3500
3100
3300
3300
2900
3500
P1dB
(W)
6
20
30
100
105
120
120
130
130
150
350
350
VDS
(V)
32
32
32
32
30
32
32
32
32
32
32
32
P
L
(W)
6
20
30
100
105
120
120
130
130
150
350
350
η
D
(%)
33
45
50
40
55
48
43
50
47
47
50
43
G
p
(dB)
15
15.5
13
8
16.5
13.5
11
12
12.5
13.5
13.5
10
Test signal
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
Package
Final
3.7.4
Gallium Nitride (GaN) RF power amplifiers
Device naming conventions GaN RF power amplifiers
Device naming conventions GaN RF power amplifiers
C L
P:
push-pull indicator, P = push-pull type; no P means single-ended transistor
2 to 1500: nominal P3dB in Watts: eg 50 = 50W
S earless type, S = earless; no S means eared package
35 to 60: upper frequency, 10x GHz value: 35 = 3.5GHz; 60 = 6.0GHz
00 to 40: lower frequency, 10x GHz value: 00 = 0GHz or DC; 40 = 4.0GHz
1G: technology generation: 1G = 1st generation
F: package style: F = ceramic, P = overmolded plastic
L: high frequency power transistor
C: primary material identifier: C = wide band-gap compound materials, eg GaN
F
1G
0040 S
# P
Type
CLF1G0060-10*
CLF1G0060-30*
f
min
(MHz)
0
0
0
0
f
max
(MHz)
6000
6000
3500
3500
P
out
(W)
10
30
50
100
Matching
-
-
-
-
VDS
(V)
50
50
50
50
η
D
(%)
54
54
54
52
G
p
(dB)
14
14
14.2
14.8
Test
signal
Pulsed
Pulsed
Pulsed
Pulsed
Package
SOT1227
SOT1227
Applications
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
3.8 Wireless microcontroller chipsets and modules
Type
JN5142-J01
JN5142-001
Module/
single chip
Module
Module
Module
Single chip
Single chip
Single chip
Single chip
Single chip
Application
2.4-2.4835 GHz
JenNet & IEEE802.15.4
2.4-2.4835 GHz
JenNet & IEEE802.15.4
2.4-2.4835 GHz
JenNet & IEEE802.15.4
2.4-2.4835 GHz
JenNet-IP
2.4-2.4835 GHz
JenNet-IP
2.4-2.4835 GHz
RF4CE & IEEE802.15.4
2.4-2.4835 GHz
JenNet & IEEE802.15.4
2.4-2.4835 GHz
ZigBee PRO
TX power
+2.5 dBm
+2.5 dBm
+20 dBm
+2.5 dBm
+2.5 dBm
+2.5 dBm
+2.5 dBm
+2.5 dBm
Receiver sensitivity
–95 dBm
–95 dBm
–98 dBm
–95 dBm
–95 dBm
–95 dBm
–95 dBm
–95 dBm
TX
RX
Operating
current current
voltage
15 mA
15 mA
110mA
15 mA
15 mA
15 mA
15 mA
15 mA
17.5 mA
17.5 mA
23 mA
17.5 mA
17.5 mA
17.5 mA
17.5 mA
17.5 mA
2.3-3.6 V
2.3-3.6 V
2.7-3.6 V
2.3-3.6 V
2.3-3.6 V
2.3-3.6 V
2.3-3.6 V
2.3-3.6 V
Form
factor
Integral antenna
18 x 32 mm
U.FL connector
18 x 30 mm
U.FL connector
18 x 41 mm
6 x 6 mm QFN40
8 x 8 mm QFN56
6 x 6 mm QFN40
8 x 8 mm QFN56
8 x 8 mm QFN56
Bold red
= new, highly recommended product
* Check status in section 3.1, as this type is not yet released for mass production
NXP Semiconductors RF Manual 16
th
edition
101
Products by function
PHILIPS [ NXP SEMICONDUCTORS ]
