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1011LD110B 参数 Datasheet PDF下载

1011LD110B图片预览
型号: 1011LD110B
PDF下载: 下载PDF文件 查看货源
内容描述: RF手册第16版 [RF Manual 16th edition]
分类和应用:
文件页数/大小: 130 页 / 9375 K
品牌: PHILIPS [ NXP SEMICONDUCTORS ]
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1.4.6
Generic RF front-end
Application diagram
antenna
filter
LNA
filter
mixer
buffer
SPDT
switch
VCO
LOW
FREQUENCY
CHIP SET
filter
PA
driver
VCO
bra850
Recommended products
Function
SPDT switch
Product
RF diode
Bandswitch
diode
PIN diode
Function
Product
Wideband
transistor
Package
Various
Various
Package
Type
BAP51^
BAP1321^
Type
Type
Function
Mixer
Product
RF bipolar
transistor
MMIC
Function
Buffer
Product
RF bipolar
transistor
Wideband
transistor
Wideband
transistor
Linear mixer
Package
Package
Package
General-
purpose
wideband
amplifier
Type
Type
Type
Type
RF bipolar
transistor
LNA
Function
Power
amplifier
Product
SiGe:C
transistor
MMIC
MMIC
Low-noise
wideband ampl.
Package
Function
VCO
Product
Varicap
diodes
VCO varicap
diodes
Package
Function
Driver
Product
RF bipolar
transistor
MMIC
Wideband
transistor
Gen-purp
wideband amp
^
Also available in ultra-small leadless package SOD882D
Product highlight:
Silicon NPN germanium microwave transistor for high-speed, low-
noise applications in a plastic, 4-pin dual-emitter SOT343F package.
`
Low-noise, high-linearity microwave transistor
`
110 GHz f
T
silicon germanium technology
`
High maximum output power at 1 dB compression of 20 dBm
at 1.8 GHz
Features
30
NXP Semiconductors RF Manual 16
th
edition