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1011LD110B 参数 Datasheet PDF下载

1011LD110B图片预览
型号: 1011LD110B
PDF下载: 下载PDF文件 查看货源
内容描述: RF手册第16版 [RF Manual 16th edition]
分类和应用:
文件页数/大小: 130 页 / 9375 K
品牌: PHILIPS [ NXP SEMICONDUCTORS ]
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1.4.5
802.11n DBDC and 802.11ac WLAN
Application diagram
low pass
lter
antenna
SPDT
switch
Tx
medium
power
ampli er
PActrl
APPLICATION
CHIPSET
Rx
bandpass
lter
LNA
SPDT
bra502
Recommended products
Function
Medium
power
amplifier
Product
MMIC
Medium power
amplifier
Package
Type
Type
Function
LNA
Product
RF transistor
MMIC
SiGe:C
transistor
SiGe:C MMIC
Package
SOT883C
Product highlight:
The BGU760F is part of the family of 6
th
(Si) and 7
th
(SiGe:C)
generation RF transistors and can be used to perform nearly any RF
function. These next-generation wideband transistors offer the best
RF noise figure versus gain performance, drawing the lowest current.
This performance allows for better signal reception at low power and
enables RF receivers to operate more robustly in noisy environments.
`
System optimized gain of 12.5 dB @ 2.4 GHz and 11 dB @ 5.5 GHz
`
Low noise figure (NF) of 1.1 dB @ 2.4 GHz and 5.5 GHz
`
High input 1 dB gain compression (P
i(1dB)
) of  -8 dBm @ 2.4 GHz and
-5 dBm @ 5.5 GHz
`
High input third order intercept point IP3
I
of  +3 dBm @ 2.4 GHz and
+8 dBm @ 5.5 GHz
`
Only 8 external components required
Features
NXP Semiconductors RF Manual 16
th
edition
29
Products
by application