0510-50A 参数 Datasheet PDF下载

型号：	0510-50A
PDF下载：	下载PDF文件查看货源
内容描述：	RF手册第16版 [RF Manual 16th edition]
分类和应用：
文件页数/大小：	130 页 / 9375 K
品牌：	PHILIPS [ NXP SEMICONDUCTORS ]

2.6 Technology

2.6.1

The first mainstream semiconductor company to offer GaN products

NXP Galium-Nitride (GaN) broadband amplifiers

A disruptive technology, setting new performance boundaries for RF power amplifiers

If independent market research claims come true, GaN product

sales will exceed 300 Musd in 2014. This can only happen if GaN

is made available through mainstream semiconductor companies,

and NXP is the first to make this happen. So, what is it about GaN

and RF power applications ? Simply put, GaN makes a step increase

in efficiency and power density performance over Si LDMOS in

most applications. This can be quantified in the Johnson’s Figure

of Merit (FoM) – a combination of significant RF performance

variables that has a baseline for Si at 1 and leads to a FoM for GaN

of 324. To put this into some context, GaAs, another commonly

used compound material in RF, has a FoM of 1.44. With such a high

FoM rating, GaN truly represents a breakthrough technology.

GaN products are termed High-Electron Mobility Transistors

(HEMT), a name that captures one of the intrinsic benefits of

GaN: the high electron drift velocity. These transistors are

depletion-mode devices, that is, devices that are normally on,

without the need for applying a gate bias. A negative gate

bias will be needed to switch the transistors off. This biasing

is not straightforward, but at NXP, we've developed complete

solutions (not just individual components) that include a tried

and tested bias circuit. We also provide continuous application

support throughout the life of the product.

A further advantage of GaN is that it is a very hard structure able

to withstand very high temperatures. NXP’s GaN transistors will

be specified to a maximum temperature of 250 °C, compared to

225 °C for Si LDMOS. Special packages are required to support

such high temperatures. In this area, NXP's GaN customers

benefit from our 30-year legacy in RF power products, and our

large industrial base. As a GaN supplier, we deliver excellence

GaN RF power amplifiers

Type

CLF1G0035-50

CLF1G0035-100

CLF1G0035-200

CLF1G0060-10

CLF1G0060-30

CLF2G2536-100

CLF2G2536-300

CLF3G4060-30

CLF3G4060-350

in product reliability and cost, and give our customers a high

degree of confidence in the supply chain. It's part of what's

needed to take GaN to the mainstream.

The first NXP GaN products will be unmatched broadband

amplifiers for use in applications requiring high RF performance

across a wide range of frequencies up to 3.5 GHz. NXP’s first

generation GaN process is designed for products operating

from a 50V supply voltage, delivering best-in-class efficiency

and linearity. The products will use industry-standard package

footprints enabling customers to adopt NXP’s products into

existing designs without changing the mechanical design.

Next-generation GaN devices from NXP will be super-efficient,

enabling a breakthrough in performance for the largest RF

power market segment: cellular base stations. In turn this

technology will enable a departure from linear amplifier

topologies with the onset of switched mode power amplifier

(SMPA) concepts. NXP’s commitment to exploit the technology

in a full portfolio of products will also lead to products for higher

frequency applications up to 10 GHz.

min

(MHz) f

max

(MHz) P

out

(W) Matching

2500

4000

3500

6000

3600

6000

100

200

100

300

350

I/O

(V)

(%)

(dB)

14.2

14.8

14.2

Test

signal

Pulsed

Package

SOT467

SOT1228

SOT1227

SOT1135

SOT502

SOT1135

SOT502

Planned

Applications

release

Q312

Q412

Q313

Q113

Q413

Q114