2.5.4
Building on decades of innovation in microwave and radar
NXP builds on more than 50 years of history in semiconductor technology and component design. For more
than three decades we have led in providing high-performance RF technologies for microwave applications.
The company has built a strong position in the field of RF small-signal and power transistors for microwave
amplifiers with best-in-class Si devices and processing technologies.
We were the first semiconductor company to supply S-band
transistors (2700 to 3500 MHz) based on laterally diffused
metal-oxide-silicon (LDMOS). To further strengthen our
position towards the future, we are currently developing
new high-power and high-bandwidth technologies based on
gallium nitride (GaN) material.
Another enabling technology is NXP’s BICMOS process
QUBiC, which is available in several variants with f
T
up to
200 GHz, each specialized to address specific small-signal
RF applications.
The product portfolio encompasses:
- Low-noise amplifiers (LNAs)
- Variable-gain amplifiers (VGAs)
- Mixers
- Local oscillators (LOs)
- LO generators
NXP now also focuses on architectural breakthroughs and
has developed highly integrated products for microwave and
millimeter wave. One example is a family of LO generators
from 7 to 15 GHz with integrated PLL and VCO. Another
example is an integrated RF power module in S-band
(3.1-3.5 GHz) at 200 W.
RF small-signal product highlight
Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process
technology, these highly integrated, alignment-free LO
generators TFF1xxxHN are low-power, low-spurious solutions
that simplify design-in and lower the total cost of ownership.
Features
`
Lowest noise LO generators for 7 to 15 GHz range
`
Maximum power consumption for all types, typical 330 mW
`
Phase-noise compliant with IESS-308 (Intelsat)
`
Proven QUBiC4X SiGe:C technology (120 GHz f
T
process)
`
External loop filter
`
Differential input and output
`
Lock-detect output
`
Internally stabilized voltage reference for loop filter
RF power product highlight
The BLS6G2933P-200 is the first LDMOS-based, industry-
standard pallet produced by NXP. This pallet offers more than
40% efficiency and includes the complete bias network for
S-band applications.
66
NXP Semiconductors RF Manual 16
th
edition
PHILIPS [ NXP SEMICONDUCTORS ]
