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4304-01 参数 Datasheet PDF下载

4304-01图片预览
型号: 4304-01
PDF下载: 下载PDF文件 查看货源
内容描述: 75欧姆RF数字衰减器6位, 31.5分贝, DC - 2.0 GHz的 [75 Ohm RF Digital Attenuator 6-bit, 31.5 dB, DC - 2.0 GHz]
分类和应用: 衰减器
文件页数/大小: 11 页 / 543 K
品牌: PSEMI [ Peregrine Semiconductor ]
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PE4304  
Product Specification  
Figure 3. Pin Configuration (Top View)  
Table 3. Absolute Maximum Ratings  
Symbol  
Parameter/Conditions  
Min Max Units  
VDD  
Power supply voltage  
-0.3  
-0.3  
-65  
-40  
4.0  
V
V
VI  
TST  
TOP  
PIN  
Voltage on any input  
VDD  
150  
85  
+
Storage temperature range  
Operating temperature  
Input power (50 )  
°C  
1
2
3
4
5
15  
14  
13  
12  
11  
C16  
RF1  
C8  
°C  
RF2  
20-lead QFN  
24  
dBm  
V
4x4mm  
Data  
Clock  
LE  
P/S  
Exposed Solder Pad  
VESD  
ESD voltage (Human Body  
500  
Vss/GND  
GND  
Table 4. DC Electrical Specifications  
Parameter  
Min  
Typ  
Max  
3.3  
Units  
VDD Power Supply  
Voltage  
2.7  
3.0  
V
IDD Power Supply Current  
Digital Input High  
Digital Input Low  
Input Leakage  
100  
µA  
V
Table 2. Pin Descriptions  
0.7xVDD  
Pin  
No.  
Pin  
Name  
Description  
Attenuation control bit, 16dB (Note 4).  
RF port (Note 1).  
0.3xVDD  
1
V
1
C16  
µA  
2
RF1  
3
Data  
Clock  
LE  
Serial interface data input (Note 4).  
Serial interface clock input.  
Latch Enable input (Note 2).  
Power supply pin.  
Exposed Solder Pad Connection  
4
The exposed solder pad on the bottom of the  
package must be grounded for proper device  
operation.  
5
6
VDD  
7
PUP1  
PUP2  
VDD  
Power-up selection bit, MSB.  
Power-up selection bit, LSB.  
Power supply pin.  
Electrostatic Discharge (ESD) Precautions  
8
When handling this UltraCMOS™ device, observe  
the same precautions that you would use with  
other ESD-sensitive devices. Although this device  
contains circuitry to protect it from damage due to  
ESD, precautions should be taken to avoid  
exceeding the rate specified in Table 3.  
9
10  
11  
12  
GND  
GND  
Vss/GND  
Ground connection.  
Ground connection.  
Negative supply voltage or GND  
connection(Note 3)  
13  
14  
P/S  
RF2  
C8  
Parallel/Serial mode select.  
RF port (Note 1).  
Latch-Up Avoidance  
15  
Attenuation control bit, 8 dB.  
Attenuation control bit, 4 dB.  
Attenuation control bit, 2 dB.  
Ground connection.  
Unlike conventional CMOS devices, UltraCMOS™  
devices are immune to latch-up.  
16  
C4  
17  
C2  
Switching Frequency  
18  
GND  
C1  
19  
Attenuation control bit, 1 dB.  
Attenuation control bit, 0.5 dB.  
Ground for proper operation  
The PE4304 has a maximum 25 kHz switching  
rate.  
20  
C0.5  
GND  
Paddle  
Resistor on Pin 1 & 3  
Note 1: Both RF ports must be DC blocked with an external series  
capacitor or held at 0 VDC  
A 10 kresistor on the inputs to Pin 1 & 3 (see  
Figure 5) will eliminate package resonance  
between the RF input pin and the two digital  
inputs. Specified attenuation error versus  
frequency performance is dependent upon this  
condition.  
.
2: Latch Enable (LE) has an internal 100 kresistor to VDD.  
3: Connect pin 12 to GND to enable internal negative voltage  
generator. Connect pin 12 to VSS (-VDD) to bypass and  
disable internal negative voltage generator.  
4. Place a 10 kresistor in series, as close to pin as possible.  
©2005 Peregrine Semiconductor Corp. All rights reserved.  
Document No. 70-0066-03 UltraCMOS™ RFIC Solutions  
Page 2 of 11  
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