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BSS84 参数 Datasheet PDF下载

BSS84图片预览
型号: BSS84
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型MOSFET [P-CHANNEL ENHANCEMENT MODE MOSFET]
分类和应用:
文件页数/大小: 4 页 / 139 K
品牌: PANJIT [ PAN JIT INTERNATIONAL INC. ]
 浏览型号BSS84的Datasheet PDF文件第1页浏览型号BSS84的Datasheet PDF文件第2页浏览型号BSS84的Datasheet PDF文件第4页  
BSS84
ELECTRICAL CHARACTERISTIC CURVES
1
-I
D
- Drain-to-Source Current (A)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
-I
D
- Drain Source Current (A)
T
J
= 25°C Unless otherwise noted
1
V
DS
=10V
0.8
0.6
0.4
25
o
C
0.2
0
0
1
2
3
4
5
6
7
0.9
V
GS
= 6V, 7V, 8V, 9V, 10V
5.0V
4.0V
3.0V
-V
DS
- Drain-to-Source Voltage (V)
-V
GS
- Gate-to-Source Voltage (V)
Fig. 1. Output Characteristics
10
Fig. 2. Transfer Characteristics
10
R
DS(ON)
- On-Resistance (Ohms)
8
6
Ids=-500mA
4
2
Ids=-50mA
0
R
DS(ON)
- On-Resistance (Ohms)
8
V
GS
= 4.5V
6
4
V
GS
=10.0V
2
0
0
0.2
0.4
0.6
0.8
1
2
4
6
8
10
-I
D
- Drain Curre nt (A)
-V
GS
- Gate-to-Source Voltage (V)
Fig. 3. On-Resistance vs. Drain Current
V
GS
Threshold Voltage (NORMALIZED
1.2
Fig. 4. On-Resistance vs. G-S Voltage
10
-I
S
- Source Current (A)
I
D
=250
µ
A
1.1
V
GS
= 0V
1
1
25
o
C
0.1
0.9
0.8
-50
-25
0
25
50
75
100
125
150
0.01
0.4
0.6
0.8
1
1.2
1.4
T
J
- Junction Temperature (
o
C)
-V
SD
- Source-to-Drain Voltage (V)
Fig. 5. Threshold Voltage vs. Temperature
8/12/2005
Page 3
Fig. 6. Sourse-Drain Diode Forward Voltage
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