BSS84
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS (Note 3)
Parameter
Symbol
Conditions
Min
-50
-
-
-
-
Typ
-
-
-
-
-
Max
-
-15
-60
-0.1
±10
nA
µA
Units
V
Drain-Source Breakdown Voltage BV
DSS
I
D
= -250µA, V
GS
= 0V
V
DS
= -50V, V
GS
= 0V, T
J
=25°C
Zero Gate Voltage Drain Current
Gate-Body Leakage
I
DSS
I
GSS
V
DS
= -50V, V
GS
= 0V, T
J
=125°C
V
DS
= -25V, V
GS
= 0V, T
J
=25°C
V
GS
= ±20V, V
DS
= 0V
T
J
= 25°C Unless otherwise noted
ON CHARACTERISTICS (Note 3)
Parameter
Gate Threshold Voltage
Symbol
Conditions
Min
-0.8
-
0.05
Typ
-1.44
3.8
-
Max
-2.0
10
-
Units
V
Ohms
S
V
GS(th)
V
DS
= V
GS
I
D
= -1mA
,
Static Drain-Source On-ResistanceR
DS(ON)
V
GS
= -5V, I
D
= -0.1A
g
FS
V
DS
= -25V, I
D
= -0.1A
Forward Transconductance
DYNAMIC CHARACTERISTICS
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
C
iss
C
oss
C
rss
Conditions
V
DS
= -25V,
V
GS
= 0V,
f = 1.0MHz
Min
-
-
-
Typ
-
-
-
Max
45
25
12
Units
pF
pF
pF
SWITCHING CHARACTERISTICS
Parameter
Turn-On Delay Time
Turn-Off Delay Time
Symbol
t
D(ON)
t
D(OFF)
Conditions
V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50ohm, V
GS
= -10V
Min
-
-
Typ
7.5
25
Max
-
-
Units
ns
ns
Note 3. Short duration test pulse used to minimize self-heating
8/12/2005
Page 2
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