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BSS8402DW 参数 Datasheet PDF下载

BSS8402DW图片预览
型号: BSS8402DW
PDF下载: 下载PDF文件 查看货源
内容描述: 互补对增强型MOSFET [COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS]
分类和应用: 晶体晶体管开关光电二极管
文件页数/大小: 6 页 / 129 K
品牌: PANJIT [ PAN JIT INTERNATIONAL INC. ]
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BSS8402DW
Typical Characteristics Curves - N-Channel - Q
1
, 2N7002
T
J
= 25°C Unless otherwise noted
1
I
D
- Drain-Source Current (A)
1.2
I
D
- Drain Source Current (A
5.0V
0.8
V
DS
=10V
1
0.8
0.6
0.4
25
o
C
0.2
0
4.0V
0.6
V
GS
= 6V, 7V, 8V, 9V, 10V
0.4
0.2
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
3.0V
0
1
2
3
4
5
6
V
GS
- Gate-to-Source Voltage (V)
Fig. 1. Output Characteristics
10
R
DS(ON)
- On-Resistance (Ohms)
8
6
4
2
V
GS
=10.0V
0
10
Fig. 2. Transfer Characteristics
R
DS(ON)
- On-Resistance (Ohms)
8
6
4
V
GS
=
4.5V
Ids=500mA
2
Ids=50mA
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
I
D
- Drain Current (A)
Fig. 3. On-Resistance vs. Drain Current
V
GS
Threshold Voltage (NORMALIZED
1.1
1.05
1
0.95
0.9
0.85
0.8
-50
V
GS
- Gate-to-Source Voltage (V)
Fig. 4. On-Resistance vs. G-S Voltage
10
I
S
- Source Current (A
I
D
=250
µ
A
V
GS
= 0V
1
0.1
25
o
C
-25
0
25
50
75
100
125 150
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
T
J
- Junction Temperature (
o
C)
Fig. 5. Threshold Voltage vs. Temperature
9/15/2005
Page 4
V
SD
- Source-to-Drain Voltage (V)
Fig. 6. Sourse-Drain Diode Forward Voltage
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