欢迎访问ic37.com |
会员登录 免费注册
发布采购

BSS8402DW 参数 Datasheet PDF下载

BSS8402DW图片预览
型号: BSS8402DW
PDF下载: 下载PDF文件 查看货源
内容描述: 互补对增强型MOSFET [COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS]
分类和应用: 晶体晶体管开关光电二极管
文件页数/大小: 6 页 / 129 K
品牌: PANJIT [ PAN JIT INTERNATIONAL INC. ]
 浏览型号BSS8402DW的Datasheet PDF文件第2页浏览型号BSS8402DW的Datasheet PDF文件第3页浏览型号BSS8402DW的Datasheet PDF文件第4页浏览型号BSS8402DW的Datasheet PDF文件第5页浏览型号BSS8402DW的Datasheet PDF文件第6页  
BSS8402DW
COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS
This space-efficient device contains an electrically-isolated complimentary pair
of enhancement-mode MOSFETs (one N-channel and one P-channel). It
comes in a very small SOT-363 (SC70-6L) package. This device is ideal for
portable applications where board space is at a premium.
SOT- 363
4
5
6
2
1
3
FEATURES
Complimentary Pairs
Low On-Resistance
Low Gate Threshold Voltage
Fast Switching
Available in lead-free plating (100% matte tin finish)
6
5
4
APPLICATIONS
Switching Power Supplies
Hand-Held Computers, PDAs
Q
1
Q
2
MARKING CODE: S82
MAXIMUM RATINGS - TOTAL DEVICE
Rating
Total Power Dissipation (Note 1)
Operating Junction and Storage Temperature Range
T
J
= 25°C Unless otherwise noted
Symbol
P
D
T
J
, T
stg
1
2
3
Value
200
-55 to +150
Units
mW
°C
MAXIMUM RATINGS N - CHANNEL - Q
1
, 2N7002
Rating
Drain-Source Voltage
Drain-Gate Voltage R
GS
< 1.0Mohm
Gate-Source Voltage - Continuous
Drain Current - Continuous (Note 1)
T
J
= 25°C Unless otherwise noted
Symbol
V
DSS
V
DGR
V
GSS
I
D
Value
60
60
±20
115
Units
V
V
V
mA
MAXIMUM RATINGS P - CHANNEL - Q
2
, BSS84
Rating
Drain-Source Voltage
Drain-Gate Voltage R
GS
< 20Kohm
Gate-Source Voltage - Continuous
Drain Current - Continuous (Note 1)
T
J
= 25°C Unless otherwise noted
Symbol
V
DSS
V
DGR
V
GSS
I
D
Value
-50
-50
±20
130
Units
V
V
V
mA
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient (Note 1)
Symbol
R
thja
Value
625
Units
°C/W
Note 1. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout
9/15/2005
Page 1
www.panjit.com