晶体管
P
C
- TA
500
–1200
Ta=25˚C
450
–1000
2SB1030 , 2SB1030A
I
C
— V
CE
–100
V
BE ( SAT )
— I
C
基地发射极饱和电压V
BE ( SAT )
(V)
I
C
/I
B
=10
集电极耗散功率P
C
( mW)的
–30
–10
–3
–1
Ta=–25˚C
25˚C
75˚C
350
300
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
集电极电流I
C
(MA )
400
–800
I
B
=–10mA
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
–600
–400
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–200
0
0
–2
–4
–6
–8
–10
–12
–1
–3
–10
环境温度Ta (C )
集电极到发射极电压V
CE
(V)
集电极电流I
C
(A)
V
CE ( SAT )
— I
C
集电极到发射极饱和电压V
CE ( SAT )
(V)
–100
–30
–10
–3
–1
Ta=75˚C
25˚C
–25˚C
I
C
/I
B
=10
600
h
FE
— I
C
160
V
CE
=–10V
f
T
— I
E
V
CB
=–10V
Ta=25˚C
正向电流传输比H
FE
500
过渡频率f
T
(兆赫)
–1
–3
–10
140
120
100
80
60
40
20
400
300
Ta=75˚C
200
25˚C
–25˚C
100
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
0
– 0.01 – 0.03 – 0.1 – 0.3
0
0.1
0.3
1
3
10
30
100
集电极电流I
C
(A)
集电极电流I
C
(A)
发射极电流I
E
(MA )
C
ob
— V
CB
20
240
I
E
=0
f=1MHz
Ta=25˚C
NV - 我
C
V
CE
=–10V
Ta=25˚C
功能= FLAT
集电极输出电容C
ob
(PF )
18
16
14
12
10
8
6
4
2
0
–1
200
噪声电压NV (MV )
160
120
80
R
g
=100kΩ
22kΩ
40
4.7kΩ
0
–10
–3
–10
–30
–100
–30
–100
–300
–1000
集电极基极电压V
CB
(V)
集电极电流I
C
(
µA
)
2