Composite Transistors
Common characteristics chart
P
T
— Ta
500
XN4609
Total power dissipation P
T
(mW)
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (˚C)
Characteristics charts of Tr1
I
C
— V
CE
1.2
100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
Ta=25˚C
I
C
/I
B
=25
100
V
BE(sat)
— I
C
I
C
/I
B
=10
Base to emitter saturation voltage V
BE(sat)
(V)
1.0
I
B
=4.0mA
3.5mA
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
–25˚C
Ta=75˚C
25˚C
30
10
3
25˚C
1
0.3
0.1
0.03
0.01
0.01 0.03
Ta=–25˚C
75˚C
Collector current I
C
(A)
0.8
3.0mA
2.5mA
0.6
2.0mA
1.5mA
0.4
1.0mA
0.2
0.5mA
0
0
1
2
3
4
5
6
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
Collector current I
C
(A)
h
FE
— I
C
1200
V
CE
=2V
400
350
300
250
200
150
100
50
f
T
— I
E
24
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CB
=10V
Ta=25˚C
f=1MHz
I
E
=0
Ta=25˚C
Forward current transfer ratio h
FE
1000
Transition frequency f
T
(MHz)
20
800
Ta=75˚C
600
25˚C
–25˚C
16
12
400
8
200
4
0
0.01 0.03
0.1
0.3
1
3
10
0
–1
0
–2 –3 –5
–10
–20 –30 –50 –100
1
2
3
5
10
20 30 50
100
Collector current I
C
(A)
Emitter current I
E
(mA)
Collector to base voltage V
CB
(V)
3
PANASONIC [ PANASONIC SEMICONDUCTOR ]
