Composite Transistors
XN4609
(Ta=25˚C)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on*2
Conditions
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CB
= 25V, I
E
= 0
V
CE
= 2V, I
C
= 0.5A
*1
V
CE
= 2V, I
C
= 1A
*1
I
C
= 0.5A, I
B
= 20mA
I
C
= 0.5A, I
B
= 20mA
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
200
10
1.0
200
60
0.13
0.4
1.2
V
V
MHz
pF
Ω
min
25
20
12
0.1
800
typ
max
Unit
V
V
V
µA
s
Electrical Characteristics
q
Tr1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON Resistance
q
Tr2
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CB
= –20V, I
E
= 0
V
CE
= –10V, I
E
= 0
V
CE
= –10V, I
C
= –2mA
I
C
= –100mA, I
B
= –10mA
V
CB
= –10V, I
E
= 1mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
160
– 0.3
80
2.7
min
–60
–50
–7
– 0.1
–100
460
V
MHz
pF
typ
max
Unit
V
V
V
µA
µA
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
*2
Pulse measurement
R
on
test circuit
I
B
=1mA
f=1kHz
V=0.3V
1kΩ
V
B
V
V
V
A
R
on
=
V
B
!1000(Ω)
V
A
–V
B
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
