XN04604
Common characteristics chart
P
T
T
a
500
Total power dissipation
P
T
(mW)
400
300
200
100
0
0
40
80
120
160
Ambient temperature
T
a
(
°C
)
Characteristics charts of Tr1
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
1.2
T
a
=
25°C
I
B
=
4.0 mA
3.5 mA
10
2
V
CE(sat)
I
C
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/ I
B
=
25
10
2
V
BE(sat)
I
C
I
C
/ I
B
=
10
1.0
Collector current I
C
(A)
3.0 mA
0.8
2.5 mA
0.6
2.0 mA
1.5 mA
0.4
1.0 mA
0.2
0.5 mA
10
10
25°C
1 T
a
= −25°C
75°C
1
T
a
=
75°C
10
−1
25°C
−25°C
10
−1
0
0
1
2
3
4
5
6
10
−2
10
−2
10
−1
1
10
10
−2
10
−2
10
−1
1
10
Collector-emitter voltage V
CE
(V)
Collector current I
C
(A)
Collector current I
C
(A)
h
FE
I
C
1 200
V
CE
=
2 V
400
f
T
I
E
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
V
CB
=
10 V
T
a
=
25°C
C
ob
V
CB
24
f
=
1 MHz
I
E
=
0
T
a
=
25°C
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
1 000
20
300
800
T
a
=
75°C
600
25°C
−25°C
16
200
12
400
8
100
200
4
0
10
−2
10
−1
1
10
0
−1
−10
−10
2
0
1
10
10
2
Collector current I
C
(A)
Emitter current I
E
(mA)
Collector-base voltage V
CB
(V)
SJJ00084BED
3
PANASONIC [ PANASONIC SEMICONDUCTOR ]
