XN04604
■
Electrical Characteristics
T
a
=
25°C
±
3°C
•
Tr1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
*1
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
V
CB
=
25 V, I
E
=
0
V
CE
=
2 V, I
C
=
0.5 A
V
CE
=
2 V, I
C
=
1 A
I
C
=
0.5 A, I
B
=
20 mA
I
C
=
0.5 A, I
B
=
20 mA
V
CB
=
10 V, I
E
= −50
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
25
20
12
Typ
Max
Unit
V
V
V
µA
V
V
MHz
pF
Ω
0.1
200
60
0.13
0.40
1.2
200
10
1.0
800
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
*1
Collector output capacitance
(Common base, input open circuited)
ON resistance
*2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
1 kΩ
*2: R
on
test circuit
I
B
=
1 mA
V
B
V
V
V
B
×
1 000
(Ω)
V
A
−
V
B
f
=
1 kHz
V
=
0.3 V
V
A
•
Tr2
Parameter
R
on
=
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −1
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CB
= −10
V, I
E
=
0
V
CE
= −2
V, I
C
= −
0.5 A
V
CE
= −2
V, I
C
= −1
A
I
C
= −
0.4 A, I
B
= −8
mA
I
C
= −
0.4 A, I
B
= −8
mA
V
CB
= −10
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
Min
−15
−10
−7
Typ
Max
Unit
V
V
V
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*
−
0.1
100
60
−
0.16
−
0.30
−
0.8
130
22
−1.2
350
µA
V
V
MHz
pF
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
2
SJJ00084BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
