Composite Transistors
f
T
— I
E
160
XN4601
C
ob
— V
CB
8
6
f=1MHz
I
E
=0
Ta=25˚C
V
CB
=–5V
f=1kHz
R
g
=2kΩ
Ta=25˚C
NF — I
E
Collector output capacitance C
ob
(pF)
Transition frequency f
T
(MHz)
140
120
100
80
60
40
20
0
0.1
V
CB
=–10V
Ta=25˚C
7
6
5
4
3
2
1
0
–1
5
Noise figure NF (dB)
4
3
2
1
0.3
1
3
10
30
100
–2 –3 –5
–10
–20 –30 –50
–100
0
0.01 0.03
0.1
0.3
1
3
10
Emitter current I
E
(mA)
Collector to base voltage V
CB
(V)
Emitter current I
E
(mA)
NF — I
E
20
18
16
V
CB
=–5V
R
g
=50kΩ
Ta=25˚C
h Parameter — I
E
300
200
h
fe
100
300
200
h Parameter — V
CE
I
E
=2mA
f=270Hz
Ta=25˚C
h
fe
100
Noise figure NF (dB)
14
12
10
8
6
4
2
0
0.1
1kHz
10kHz
Parameter h
f=100Hz
30
20
10
5
3
2
1
0.1
h
oe
(µS)
Parameter h
50
50
30
20
h
oe
(µS)
10
5
3
h
re
(×10
–4
)
h
ie
(kΩ)
h
ie
(kΩ)
V
CE
= – 5V
f=270Hz
Ta=25˚C
2
3
5
10
2
1
0.1
h
re
(×10
–4
)
0.2 0.3 0.5
1
0.2 0.3 0.5
1
2
3
5
10
0.2 0.3 0.5
1
2
3
5
10
Emitter current I
E
(mA)
Emitter current I
E
(mA)
Collector to emitter voltage V
CE
(V)
Characteristics charts of Tr2
I
C
— V
CE
60
Ta=25˚C
I
B
=160µA
50
1000
1200
V
CE
=10V
Ta=25˚C
200
I
B
— V
BE
240
I
C
— V
BE
V
CE
=10V
Collector current I
C
(mA)
Base current I
B
(
µA
)
140µA
40
120µA
100µA
30
80µA
20
60µA
40µA
10
20µA
0
0
2
4
6
8
10
Collector current I
C
(mA)
800
160
600
120
Ta=75˚C
80
25˚C
–25˚C
400
200
40
0
0
0.2
0.4
0.6
0.8
1.0
0
0
0.4
0.8
1.2
1.6
2.0
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
Base to emitter voltage V
BE
(V)
4
PANASONIC [ PANASONIC SEMICONDUCTOR ]
