Composite Transistors
XN4601
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
Unit: mm
For general amplification
0.65±0.15
+0.2
2.8
–0.3
1.5
–0.05
6
+0.25
0.65±0.15
1
0.3
–0.05
0.5
–0.05
0.95
+0.2
q
q
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
2.9
–0.05
1.9±0.1
5
2
0.95
4
3
0.4±0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Tr1
Emitter to base voltage
Collector current
Peak collector current
Collector to base voltage
Collector to emitter voltage
Tr2
Emitter to base voltage
Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
60
50
7
100
200
–60
–50
–7
–100
–200
300
150
–55 to +150
Unit
V
V
V
mA
mA
V
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol:
5C
Internal Connection
6
Tr1
1
2
3
V
V
mA
mA
mW
˚C
˚C
5
4
Tr2
0 to 0.05
0.1 to 0.3
0.8
q
2SD601A+2SB709A
1.1
–0.1
0.16
–0.06
+0.2
s
Basic Part Number of Element
+0.1
1.45±0.1
s
Features
+0.1
+0.1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
