Composite Transistors
P
T
— Ta
500
XN4213
Total power dissipation P
T
(mW)
400
300
200
100
0
0
40
80
120
160
Ambient temperature Ta (˚C)
I
C
— V
CE
160
100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
400
Ta=25˚C
h
FE
— I
C
V
CE
=10V
Collector current I
C
(mA)
120
100
80
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
30
10
3
1
0.3
25˚C
0.1
0.03
0.01
0.1
–25˚C
Ta=75˚C
Forward current transfer ratio h
FE
140
I
B
=1.0mA
350
300
250
200
150
100
50
0
Ta=75˚C
25˚C
–25˚C
60
40
20
0
0
2
4
6
8
10
12
0.2mA
0.1mA
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
10000
3000
V
O
=5V
Ta=25˚C
100
30
V
IN
— I
O
V
O
=0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
1000
300
100
30
10
3
10
3
1
0.3
0.1
0.03
0.01
0.1
3
2
1
0
0.1
0.3
1
3
10
30
100
1
0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
