Composite Transistors
XN4213
Silicon NPN epitaxial planer transistor
Unit: mm
For switching/digital circuits
0.65±0.15
+0.2
2.8
–0.3
1.5
–0.05
6
+0.25
0.65±0.15
1
0.3
–0.05
0.5
–0.05
0.95
2.9
–0.05
q
q
Two elements incorporated into one package.
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half.
1.9±0.1
+0.2
5
2
0.95
4
3
s
Basic Part Number of Element
q
1.1
–0.1
0.4±0.2
s
Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Ratings
50
50
100
300
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
Rating Collector to base voltage
of
Collector to emitter voltage
element
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol:
8S
Internal Connection
6
5
4
Tr1
1
2
3
Tr2
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Transition frequency
Input resistance
Resistance ratio
(Ta=25˚C)
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
f
T
R
1
R
1
/R
2
Conditions
I
C
= 10µA, I
E
= 0
I
C
= 2mA, I
B
= 0
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 6V, I
C
= 0
V
CE
= 10V, I
C
= 5mA
I
C
= 10mA, I
B
= 0.3mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 1kΩ
V
CC
= 5V, V
B
= 3.5V, R
L
= 1kΩ
V
CB
= 10V, I
E
= –2mA, f = 200MHz
–30%
0.8
150
47
1.0
+30%
1.2
4.9
0.2
80
0.25
V
V
V
MHz
kΩ
min
50
50
0.1
0.5
0.1
typ
max
Unit
V
V
µA
µA
mA
0 to 0.05
UN1213
×
2 elements
0.1 to 0.3
0.8
0.16
–0.06
+0.2
+0.1
1.45±0.1
s
Features
+0.1
+0.1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
