UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
UN2211
Symbol
ICBO
Conditions
VCB = 50V, IE = 0
VCE = 50V, IB = 0
min
typ
max
0.1
0.5
0.5
0.2
0.1
0.01
1.0
1.5
2.0
0.4
Unit
µA
ICEO
µA
UN2212/2214/221E/221D/221M/221N/221T
UN2213
Emitter
cutoff
current
UN2215/2216/2217/2210
UN221F/221K
UN2219
IEBO
VEB = 6V, IC = 0
mA
UN2218/221L/221V
UN221Z
Collector to base voltage
Collector to emitter voltage
UN2211
VCBO
VCEO
IC = 10µA, IE = 0
50
50
35
60
80
160
30
20
80
60
V
V
IC = 2mA, IB = 0
UN2212/221E
UN2213/2214/221M
Forward
UN2215*/2216*/2217*/2210*
UN221F/221D/2219
UN2218/221K/221L
UN221N/221T
460
current
transfer
ratio
hFE
VCE = 10V, IC = 5mA
400
200
—
UN221V
Collector to emitter saturation voltage
UN221V
IC = 10mA, IB = 0.3mA
C = 10mA, IB = 1.5mA
0.25
0.25
VCE(sat)
VOH
V
V
I
0.04
Output voltage high level
Output voltage low level
UN2213/221K
VCC = 5V, VB = 0.5V, RL = 1kΩ
VCC = 5V, VB = 2.5V, RL = 1kΩ
VCC = 5V, VB = 3.5V, RL = 1kΩ
VCC = 5V, VB = 10V, RL = 1kΩ
VCC = 5V, VB = 6V, RL = 1kΩ
VCB = 10V, IE = –2mA, f = 200MHz
4.9
0.2
0.2
0.2
0.2
V
VOL
UN221D
UN221E
Transition frequency
UN2211/2214/2215/221K
UN2212/2217/221T
fT
150
10
MHz
22
UN2213/221D/221E/2210
Input
47
UN2216/221F/221L/221N/221Z
R1
(–30%)
4.7
0.51
1
(+30%)
kΩ
resis-
tance
UN2218
UN2219
UN221M/221V
2.2
* hFE rank classification (UN2215/2216/2217/2210)
Rank
hFE
Q
R
S
160 to 260
210 to 340
290 to 460
2