Transistors with built-in Resistor
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Silicon NPN epitaxial planer transistor
Unit: mm
2.8 +–00..32
1.5 +–00..0255
For digital circuits
0.65±0.15
0.65±0.15
Features
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Costs can be reduced through downsizing of the equipment and
1
2
reduction of the number of parts.
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
3
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Resistance by Part Number
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Marking Symbol (R1)
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
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UN2211
UN2212
UN2213
UN2214
UN2215
UN2216
UN2217
UN2218
UN2219
UN2210
UN221D
UN221E
UN221F
UN221K
UN221L
UN221M
UN221N
UN221T
UN221V
UN221Z
8A
8B
8C
8D
8E
8F
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51kΩ
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
10kΩ
4.7kΩ
2.2kΩ
4.7kΩ
22kΩ
2.2kΩ
4.7kΩ
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
EIAJ:SC-59
Mini Type Package
3:Collector
8H
8I
Internal Connection
8K
8L
8M
8N
8O
8P
8Q
EL
EX
EZ
FD
FF
C
E
R1
B
R2
Absolute Maximum Ratings (Ta=25˚C)
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Parameter
Symbol
VCBO
VCEO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Collector current
50
50
V
100
mA
mW
˚C
Total power dissipation
Junction temperature
Storage temperature
PT
200
Tj
150
Tstg
–55 to +150
˚C
1