s
Electrical Characteristics (Ta=25˚C)
·
AN8003/AN8003M (3V Type)
Parameter
Output voltage
Line regulation
Load regulation
Symbol
V
O
REG
IN
REG
L
V
DIF (min.)
I
bias
RR
V
no
∆V
O
/Ta
T
j
=25˚C
Condition
V
I
=3.5 to 9V, T
j
=25˚C
I
O
=1 to 40mA, T
j
=25˚C
I
O
=1 to 50mA, T
j
=25˚C
V
I
=2.9V, I
O
=20mA, T
j
=25˚C
V
I
=2.9V, I
O
=50mA, T
j
=25˚C
I
O
=0mA, T
j
=25˚C
V
I
=4 to 6V, f=120Hz
f=10Hz to 100kHz
T
j
=–30 to+125˚C
min
2.88
typ
3
3
9
15
0.07
0.12
0.6
max
3.12
50
25
30
0.2
0.3
1
Unit
V
mV
mV
mV
V
V
mA
dB
µV
mV/˚C
Minimum I/O voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
58
70
70
0.15
Note1) The specified condition T
j
=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that
the drift in characteristic value due to a temperature rise at chip junction can be ignored.
Note2) Unless otherwise specified, V
I
=4V, I
O
=20mA, C
O
=10µF
·
AN8035/AN8035M (3.5V Type)
Parameter
Output voltage
Line regulation
Load regulation
Minimum I/O voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
Symbol
V
O
REG
IN
REG
L
V
DIF (min.)
I
bias
RR
V
no
∆V
O
/Ta
T
j
=25˚C
V
I
=4 to 9.5V, T
j
=25˚C
I
O
=1 to 40mA, T
j
=25˚C
I
O
=1 to 50mA, T
j
=25˚C
V
I
=3.4V, I
O
=20mA, T
j
=25˚C
V
I
=3.4V, I
O
=50mA, T
j
=25˚C
I
O
=0mA, T
j
=25˚C
V
I
=4.5 to 6.5V, f=120Hz
f=10Hz to 100kHz
T
j
=–30 to+125˚C
57
Condition
min
3.36
typ
3.5
3.5
10
20
0.07
0.12
0.6
69
75
0.2
max
3.64
50
30
40
0.2
0.3
1
Unit
V
mV
mV
mV
V
V
mA
dB
µV
mV/˚C
Note1) The specified condition T
j
=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that
the drift in characteristic value due to a temperature rise at chip junction can be ignored.
Note2) Unless otherwise specified, V
I
=4.5V, I
O
=20mA, C
O
=10µF
·
AN8004/AN8004M (4V Type)
Parameter
Output voltage
Line regulation
Load regulation
Minimum I/O voltage difference
Bias current
Ripple rejection ratio
Output noise voltage
Output voltage temperature coefficient
Symbol
V
O
REG
IN
REG
L
V
DIF (min.)
I
bias
RR
V
no
∆V
O
/Ta
T
j
=25˚C
V
I
=4.5 to 10V, T
j
=25˚C
I
O
=1 to 40mA, T
j
=25˚C
I
O
=1 to 50mA, T
j
=25˚C
V
I
=3.8V, I
O
=20mA, T
j
=25˚C
V
I
=3.8V, I
O
=50mA, T
j
=25˚C
I
O
=0mA, T
j
=25˚C
V
I
=5 to 7V, f=120Hz
f=10Hz to 100kHz
T
j
=–30 to+125˚C
56
Condition
min
3.84
typ
4
3.5
10
20
0.07
0.12
0.6
67
80
0.2
max
4.16
50
30
40
0.2
0.3
1
Unit
V
mV
mV
mV
V
V
mA
dB
µV
mV/˚C
Note1) The specified condition T
j
=25˚C means that the test should be conducted with each test time reduced (within 10ms) so that
the drift in characteristic value due to a temperature rise at chip junction can be ignored.
Note2) Unless otherwise specified, V
I
=5V, I
O
=20mA, C
O
=10µF
PANASONIC [ PANASONIC SEMICONDUCTOR ]
