Silicon MOS FETs (Small Signal)
2SK665
Silicon N-Channel MOS FET
For switching
unit: mm
2.1±0.1
s
Features
q
High-speed switching
q
Small drive current owing to high input inpedance
q
High electrostatic breakdown voltage
0.65
0.425
1.25±0.1
0.425
1
2.0±0.2
1.3±0.1
0.65
3
2
0.9±0.1
0 to 0.1
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
20
8
100
200
150
150
−55
to +150
Unit
V
V
mA
mA
mW
°C
°C
0.7±0.1
0.2±0.1
1: Gate
2: Source
3: Drain
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol: 3O
Internal Connection
D
R
1
G
R
2
S
s
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
High level output voltage
Low level output voltage
Input resistance
Turn-on time
Turn-off time
*1
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
OH
*3
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= 8V, V
DS
= 0
I
D
= 100µA, V
GS
= 0
I
D
= 100µA, V
DS
= V
GS
I
D
= 20mA, V
GS
= 5V
I
D
= 20mA, V
DS
= 5V, f = 1kHz
V
DD
= 5V, V
GS
= 1V, R
L
= 200Ω
min
40
20
1.5
20
4.5
typ
max
10
80
3.5
50
0.15
–0.05
+0.1
s
Absolute Maximum Ratings
(Ta = 25°C)
0.2
0.3
–0
+0.1
Unit
µA
µA
V
V
Ω
mS
V
V
kΩ
µs
µs
V
SL
V
DD
= 5V, V
GS
= 5V, R
L
= 200Ω
1
R
1
+ R
2*
t
on*2
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200Ω
t
off*2
*2
1
100
200
1
1
V
DD
= 5V, V
GS
= 5 to 0V, R
L
= 200Ω
*3
Resistance ratio R
1
/R
2
= 1/50
V
out
200Ω
t
on
, t
off
measurement circuit
Pulse measurement
90%
100µF
V
GS
= 5V
50Ω
V
in
V
DD
= 5V
V
out
10%
10%
90%
t
on
t
off
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
