Power F-MOS FETs
C
iss
, C
oss
, C
rss
V
DS
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) C
iss
,C
oss
,C
rss
(pF)
10000
f=1MHz
T
C
=25˚C
2SK3046
V
DS
, V
GS
Q
g
400
16
14
12
V
DS
10
8
6
4
2
0
60
300
I
D
=8A
T
C
=25˚C
t
d(on)
, t
r
, t
f
, t
d(off)
I
D
V
DD
=200V
V
GS
=10V
T
C
=25˚C
Drain to source voltage V
DS
(V)
Gate to source voltage V
GS
(V)
350
300
250
200
150
100
50
0
0
10
20
30
40
Switching time t
d(on)
,t
r
,t
f
,t
d(off)
(ns)
C
iss
250
1000
200
100
C
oss
C
rss
150
t
d(on)
100
t
f
t
r
50
t
d(off)
V
GS
10
1
0
50
100
150
200
0
0
2
4
6
8
10
50
Drain to source voltage V
DS
(V)
Gate charge amount Q
g
(nC)
Drain current I
D
(A)
R
th(t)
t
10
2
(1) Without heat sink
(2) With a 100
×
100
×
2mm Al heat sink
(1)
Thermal resistance R
th
(t) (˚C/W)
10
(2)
1
10
–1
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Time t (s)
3
PANASONIC [ PANASONIC SEMICONDUCTOR ]
