Power F-MOS FETs
Area of safe operation (ASO)
100
30
10
3
1
0.3
10ms
0.1
100ms
0.03
0.01
1
3
10
30
100
300
1000
60
2SK3046
P
D
Ta
100
EAS
T
j
Avalanche energy capacity EAS (mJ)
Allowable power dissipation P
D
(W)
Non repetitive pulse
T
C
=25˚C
t=10µs
(1) T
C
=Ta
(2) Without heat sink
50
80
Drain current I
D
(A)
40
(1)
30
DC
100µs
1ms
60
40
20
10
(2)
0
0
20
40
60
80 100 120 140 160
20
0
25
50
75
100
125
150
175
Drain to source voltage V
DS
(V)
Ambient temperature Ta (˚C)
Junction temperature T
j
(˚C)
I
D
V
DS
16
T
C
=25˚C
14 V
GS
=15V
10V
8
12
10
8
6
4
5V
2
0
0
10
20
30
40
50W
4V
50
60
0
0
2
5.5V
7V
6V
10
I
D
V
GS
6
V
DS
=25V
T
C
=0˚C
25˚C
150˚C
100˚C
V
th
T
C
V
DS
=25V
I
D
=1mA
5
Gate threshold voltage V
th
(V)
10
12
Drain current I
D
(A)
Drain current I
D
(A)
4
6
3
4
2
2
1
0
4
6
8
0
25
50
75
100
125
150
Drain to source voltage V
DS
(V)
Gate to source voltage V
GS
(V)
Case temperature T
C
(˚C)
V
DS
V
GS
Drain to source ON-resistance R
DS(on)
(
Ω
)
40
T
C
=25˚C
2.4
R
DS(on)
I
D
6
| Y
fs
|
I
D
Forward transfer admittance |Y
fs
| (S)
V
GS
=10V
V
DS
=25V
T
C
=25˚C
5
Drain to source voltage V
DS
(V)
2.0
30
1.6
T
C
=150˚C
1.2
100˚C
4
20
3
I
D
=14A
10
1.75A
0.8
25˚C
0˚C
2
7A
3.5A
5
10
15
20
25
30
0.4
1
0
0
0
0
2
4
6
8
10
0
0
2
4
6
8
10
Gate to source voltage V
GS
(V)
Drain current I
D
(A)
Drain current I
D
(A)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
