Transistor
P
C
— Ta
1.4
2SD968, 2SD968A
I
C
— V
CE
I
B
=20mA
1.2
1.2
I
C
— I
B
Ta=25˚C
12mA
10mA
8mA
6mA
1.0
V
CE
=10V
Ta=25˚C
Collector power dissipation P
C
(W)
1.2
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
1.0
Collector current I
C
(A)
18mA
16mA
14mA
1.0
0.8
Collector current I
C
(A)
0.8
0.8
0.6
4mA
0.6
0.6
0.4
2mA
0.2
0.4
0.4
0.2
0.2
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
12
0
0
3
6
9
12
15
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base current I
B
(mA)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
10
3
1
0.3
0.1
0.03
0.01
0.003
0.001
1
3
10
30
100
300
1000
25˚C
–25˚C
V
BE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=10
100
30
10
3
25˚C
1
0.3
0.1
0.03
0.01
1
3
10
30
100
300
1000
Ta=–25˚C
75˚C
I
C
/I
B
=10
300
h
FE
— I
C
V
CE
=10V
Forward current transfer ratio h
FE
250
Ta=75˚C
200
25˚C
–25˚C
Ta=75˚C
150
100
50
0
1
3
10
30
100
300
1000
Collector current I
C
(mA)
Collector current I
C
(mA)
Collector current I
C
(mA)
f
T
— I
E
200
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CB
=10V
Ta=25˚C
50
I
E
=0
f=1MHz
Ta=25˚C
40
Transition frequency f
T
(MHz)
160
120
30
80
20
40
10
0
–1
0
–3
–10
–30
–100
1
3
10
30
100
Emitter current I
E
(mA)
Collector to base voltage V
CB
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
