Transistor
2SD968, 2SD968A
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SB789 and 2SB789A
Unit: mm
s
q
q
q
Features
High collector to emitter voltage V
CEO
.
Large collector power dissipation P
C
.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
(Ta=25˚C)
Ratings
100
120
100
120
5
1
0.5
1
150
–55 ~ +150
1cm
2
Unit
V
3
2.6±0.1
4.5±0.1
1.6±0.2
1.5±0.1
0.4max.
45°
1.0
–0.2
+0.1
0.4±0.08
0.5±0.08
1.5±0.1
4.0
–0.20
0.4±0.04
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD968
2SD968A
2SD968
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Symbol
3.0±0.15
2
1
marking
emitter voltage 2SD968A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
V
V
A
A
W
˚C
˚C
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol :
W
(2SD968)
V
(2SD968A)
Printed circuit board: Copper foil area of
thickness of 1.7mm for the collector portion
or more, and the board
s
Electrical Characteristics
Parameter
Collector to emitter
voltage
2SD968
2SD968A
(Ta=25˚C)
Symbol
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= 100µA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 5V, I
C
= 500mA
*2
I
C
= 500mA, I
B
= 50mA
*2
I
C
= 500mA, I
B
= 50mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
100
120
5
90
50
100
0.2
0.85
120
11
*2
typ
max
Unit
V
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
FE1
220
0.6
1.2
MHz
20
pF
Rank classification
Rank
h
FE1
Q
90 ~ 155
2SD968
2SD968A
WQ
VQ
R
130 ~ 220
WR
VR
Pulse measurement
Marking
Symbol
2.5±0.1
+0.25
V
V
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
