2SD2136
P
C
T
a
2.0
Without heat sink
I
C
V
CE
5
T
C
=25˚C
I
C
V
BE
8
V
CE
=4V
Collector power dissipation P
C
(W)
1.6
4
25˚C
90mA
80mA
70mA
60mA
50mA
40mA
30mA
20mA
Collector current I
C
(A)
Collector current I
C
(A)
I
B
=100mA
6
T
C
=100˚C
–25˚C
1.2
3
4
0.8
2
2
0.4
1
10mA
0
0
40
80
120
160
0
0
2
4
6
8
10
12
0
0
0.4
0.8
1.2
1.6
2.0
2.4
Ambient temperature T
a
(°C)
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/I
B
=8
h
FE
I
C
10
4
f
T
I
C
V
CE
=4V
300
Forward current transfer ratio h
FE
10
T
C
=100˚C
25˚C
10
3
Transition frequency f
T
(MHz)
250
V
CB
=10V
f=200MHz
T
C
=25˚C
200
T
C
=100˚C
25˚C
1
–25˚C
10
2
–25˚C
150
100
0.1
10
50
0.01
0.01
0.1
1
10
1
0.01
0.1
1
10
0
0.01
0.1
1
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Safe operation area
100
Single pulse
T
C
=25˚C
R
th
t
10
4
Without heat sink
Thermal resistance R
th
(°C/W)
10
3
Collector current I
C
(A)
10
I
CP
t=100ms
I
C
t=1s
10
2
1
10
t=10ms
0.1
1
0.01
0.1
1
10
100
10
−1
10
−4
10
−3
10
−2
10
−1
1
10
10
2
10
3
10
4
Collector-emitter voltage V
CE
(V)
Time t (s)
2
SJD00246BED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
