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2SD2136 参数 Datasheet PDF下载

2SD2136图片预览
型号: 2SD2136
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面型 [Silicon NPN triple diffusion planar type]
分类和应用:
文件页数/大小: 3 页 / 86 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号2SD2136的Datasheet PDF文件第2页浏览型号2SD2136的Datasheet PDF文件第3页  
Power Transistors
2SD2136
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1416
7.5
±0.2
Unit: mm
4.5
±0.2
16.0
±1.0
2.5
±0.1
High forward current transfer ratio h
FE
which has satisfactory linearity.
Low collector-emitter saturation voltage V
CE(sat)
Allowing supply with the radial taping
10.8
±0.2
0.65
±0.1
0.85
±0.1
1.0
±0.1
0.8 C
90˚
Features
3.8
±0.2
0.8 C
0.7
±0.1
0.7
±0.1
1.15
±0.2
1.15
±0.2
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
60
60
6
3
5
1.5
150
−55
to
+150
Unit
V
V
0.5
±0.1
0.8 C
1
2
3
2.05
±0.2
0.4
±0.1
V
A
A
W
°C
°C
2.5
±0.2
2.5
±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Base-emitter voltage
*1
Symbol
V
CEO
V
BE
I
CES
I
CEO
I
EBO
h
FE1 *2
h
FE2 *1
*1
Conditions
I
C
=
30 mA, I
B
=
0
V
CE
=
4 V, I
C
=
3 A
V
CE
=
60 V, V
BE
=
0
V
CE
=
30 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
4 V, I
C
=
1 A
V
CE
=
4 V, I
C
=
3 A
I
C
=
3 A, I
B
=
0.375 A
V
CE
=
5 V, I
E
= −
0.1 A, f
=
200 MHz
I
C
=
1 A, I
B1
=
0.1 A, I
B2
= −
0.1 A
Min
60
Typ
Max
Unit
V
1.8
200
300
1
40
10
1.2
220
0.5
2.5
0.4
250
V
µA
µA
mA
V
MHz
µs
µs
µs
Collector-emitter cutoff current (Emitter-base short)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
f
T
t
on
t
stg
t
f
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
P
40 to 90
Q
70 to 150
R
120 to 250
Publication date: September 2003
SJD00246BED
1