Power Transistors
P
C
— Ta
200
20
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=3.5W)
(1)
100
2SD2029
I
C
— V
CE
I
B
=800mA
20
700mA
600mA
500mA
400mA
T
C
=25˚C
V
CE
=5V
I
C
— V
BE
Collector power dissipation P
C
(W)
Collector current I
C
(A)
150
Collector current I
C
(A)
16
16
T
C
=–25˚C
12
25˚C
100˚C
300mA
12
200mA
8
100mA
8
50
4
(2)
0
0
20
40
60
80 100 120 140 160
(3)
0
0
2
4
6
8
50mA
4
0
10
12
0
0.4
0.8
1.2
1.6
2.0
2.4
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
10
I
C
/I
B
=10
3
T
C
=100˚C
1
0.3
0.1
0.03
0.01
0.003
0.001
0.1
25˚C
–25˚C
10000
h
FE
— I
C
1000
V
CE
=5V
300
100
30
10
3
1
0.3
0.1
0.01 0.03
f
T
— I
C
V
CE
=5V
f=1MHz
T
C
=25˚C
Forward current transfer ratio h
FE
1000
300
T
C
=100˚C
100
25˚C
30
10
3
1
0.1
–25˚C
0.3
1
3
10
30
100
0.3
1
3
10
30
100
Transition frequency f
T
(MHz)
3000
0.1
0.3
1
3
10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
— V
CB
10000
Area of safe operation (ASO)
100
I
E
=0
f=1MHz
T
C
=25˚C
30 I
CP
Non repetitive pulse
T
C
=25˚C
t=10ms
Collector output capacitance C
ob
(pF)
3000
Collector current I
C
(A)
10 I
C
3
1
0.3
0.1
0.03
100ms
DC
1000
300
100
30
10
1
3
10
30
100
0.01
1
3
10
30
100
300
1000
Collector to base voltage V
CB
(V)
Collector to emitter voltage V
CE
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
