Power Transistors
2SD2029
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1347
20.0±0.5
Unit: mm
φ
3.3±0.2
5.0±0.3
3.0
6.0
s
Features
q
q
q
q
Satisfactory foward current transfer ratio h
FE
collector current I
C
characteristics
Wide area of safe operation (ASO)
High transition frequency f
T
Optimum for the output stage of a HiFi audio amplifier
(T
C
=25˚C)
Ratings
160
160
5
20
12
120
3.5
150
–55 to +155
Unit
V
V
V
A
26.0±0.5
10.0
1.5
2.0
4.0
1.5
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
20.0±0.5
2.5
2.0±0.3
3.0±0.3
1.0±0.2
2.7±0.3
0.6±0.2
5.45±0.3
10.9±0.5
1
2
3
A
W
˚C
˚C
1:Base
2:Collector
3:Emitter
TOP–3L Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
h
FE1
h
FE2*
h
FE3
V
BE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 160V, I
E
= 0
V
EB
= 3V, I
C
= 0
V
CE
= 5V, I
C
= 20mA
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 8A
V
CE
= 5V, I
C
= 8A
I
C
= 8A, I
B
= 0.8A
V
CE
= 5V, I
C
= 0.5A, f = 1MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
20
210
20
60
20
1.8
2.0
V
V
MHz
pF
200
min
typ
max
50
50
Unit
µA
µA
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
FE2
Rank classification
Q
60 to 120
S
80 to 160
P
100 to 200
Rank
h
FE2
2.0
1.5
3.0
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
