2SD1938(F)
P
C
T
a
250
18
T
a
=
25°C
16
I
C
V
CE
100
V
CE
=
2 V
90
80
I
C
V
BE
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
Collector current I
C
(mA)
200
14
12
10
8
6
4
2
IB
= 10 µA
70
60
50
25°C
40
30
20
T
a
=
85°C
−25°C
150
8 µA
100
6 µA
4 µA
2 µA
0
2
4
6
8
10
12
50
10
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
0.1
I
C
/ I
B
=
10
1 600
1 400
h
FE
I
C
V
CE
=
2 V
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
100
f
=
1 MHz
T
a
=
25°C
T
a
=
85°C
−25°C
0.01
25°C
Forward current transfer ratio h
FE
T
a
=
85°C
1 200
1 000
800
600
400
200
−25°C
25°C
10
0.001
1
10
100
0
0.1
1
0
1
10
100
1 000
5
10
15
20
25
30
35
40
Collector current I
C
(mA)
Collector current I
C
(mA)
Collector-base voltage V
CB
(V)
2
SJC00313AED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
