Transistors
2SD1938(F)
Silicon NPN epitaxial planar type
For low-voltage output amplification
For muting
For DC-DC converter
■
Features
•
Low ON resistance R
on
•
High forward current transfer ratio h
FE
•
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
1
2
(0.65)
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
10˚
1.1
+0.2
–0.1
1.1
+0.3
–0.1
0.40
+0.10
–0.05
3
1.50
+0.25
–0.05
2.8
+0.2
–0.3
Unit: mm
0.16
+0.10
–0.06
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
50
20
25
300
500
200
150
−55
to
+150
Unit
V
V
V
mA
mA
mW
°C
°C
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
JEDEC: SOT-346
Mini3-G1 Package
Marking symbol: 3W
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
ON resistance
*2
Symbol
V
CEO
V
BE
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
R
on
Conditions
I
C
=
1 mA, I
B
=
0
V
CE
=
2 V, I
C
=
4 mA
V
CB
=
50 V, I
E
=
0
V
EB
=
25 V, I
C
=
0
V
CE
= 2 V, I
C
= 4 mA
I
C
=
30 mA, I
B
=
3 mA
V
CB
=
6 V, I
E
= −4
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
1.0
80
7
500
Min
20
0.6
0.1
0.1
2 500
0.1
Typ
Max
Unit
V
V
µA
µA
V
MHz
pF
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
*2: R
on
Measuremet circuit
Rank
h
FE
S
500 to 1 500
T
800 to 2 500
No rank
500 to 2 500
I
B
=
1 mA
1 kΩ
0 to 0.1
Product of no-rank classification is not marked.
V
B
V
V
V
A
f
=
1 kHz
V
=
0.3 V
R
on
=
V
B
×
1 000 (Ω)
V
A
−
V
B
0.4
±0.2
5˚
Publication date: August 2004
SJC00313AED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
