Transistor
P
C
— Ta
800
1.2
I
B
=4.0mA
1.0
Ta=25˚C
3.5mA
3.0mA
0.8
2.5mA
2.0mA
0.6
1.5mA
0.4
1.0mA
0.5mA
0.2
100
0
0
20
40
60
80 100 120 140 160
0
0
1
2
3
4
5
6
2SD1302
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
100
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
Ta=75˚C
25˚C
–25˚C
V
CE(sat)
— I
C
I
C
/I
B
=25
Collector power dissipation P
C
(mW)
700
600
500
400
300
200
Collector current I
C
(A)
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
100
h
FE
— I
C
I
C
/I
B
=10
1200
V
CE
=2V
400
f
T
— I
E
V
CB
=10V
Ta=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
1000
Transition frequency f
T
(MHz)
0.3
1
3
10
30
10
3
1
0.3
0.1
0.03
0.01
0.01 0.03
Ta=–25˚C
75˚C
Forward current transfer ratio h
FE
350
300
250
200
150
100
50
800
Ta=75˚C
600
25˚C
–25˚C
400
25˚C
200
0.1
0.3
1
3
10
0
0.01 0.03
0.1
0
–1
–3
–10
–30
–100
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
— V
CB
24
R
on
— I
B
I
E
=0
Ta=25˚C
f=1MHz
1000
300
R
on
measuring circuit
I
B
=1mA
Collector output capacitance C
ob
(pF)
20
ON resistance R
on
(
Ω
)
100
30
10
3
1
0.3
V
B
V
V
A
16
f=1kHz
V=0.3V
12
8
4
0
1
3
10
30
100
0.1
0.01 0.03
0.1
0.3
1
3
10
Collector to base voltage V
CB
(V)
Base current I
B
(mA)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
