Transistor
2SD1302
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
5.0±0.2
Unit: mm
4.0±0.2
s
Features
q
q
q
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25˚C)
Ratings
25
20
12
1
0.5
600
150
–55 ~ +150
Unit
V
V
2.3±0.2
0.45
–0.1
1.27
+0.2
13.5±0.5
Low collector to emitter saturation voltage V
CE(sat)
.
Low ON resistance R
on
.
High foward current transfer ratio h
FE
.
5.1±0.2
0.45
–0.1
1.27
+0.2
V
A
A
mW
˚C
˚C
1 2 3
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse
(Ta=25˚C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on*3
Conditions
V
CB
= 25V, I
E
= 0
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 1A
*2
I
C
= 0.5A, I
B
= 20mA
I
C
= 0.5A, I
B
= 50mA
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
200
10
1.0
*2
min
typ
max
100
Unit
nA
V
V
V
25
20
12
200
60
0.13
0.4
1.2
800
V
V
MHz
pF
Ω
Pulse measurement
*1
h
FE1
Rank classification
R
200 ~ 350
S
300 ~ 500
T
400 ~ 800
*3
R
on
Measurement circuit
1kΩ
Rank
h
FE1
I
B
=1mA
f=1kHz
V=0.3V
V
B
V
V
V
A
R
on
=
V
B
!1000(Ω)
V
A
–V
B
1