欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SD1302 参数 Datasheet PDF下载

2SD1302图片预览
型号: 2SD1302
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延平面型(适用于低电压输出放大) [Silicon NPN epitaxial planer type(For low-voltage output amplification)]
分类和应用:
文件页数/大小: 2 页 / 44 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号2SD1302的Datasheet PDF文件第2页  
Transistor
2SD1302
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
5.0±0.2
Unit: mm
4.0±0.2
s
Features
q
q
q
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25˚C)
Ratings
25
20
12
1
0.5
600
150
–55 ~ +150
Unit
V
V
2.3±0.2
0.45
–0.1
1.27
+0.2
13.5±0.5
Low collector to emitter saturation voltage V
CE(sat)
.
Low ON resistance R
on
.
High foward current transfer ratio h
FE
.
5.1±0.2
0.45
–0.1
1.27
+0.2
V
A
A
mW
˚C
˚C
1 2 3
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse
(Ta=25˚C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on*3
Conditions
V
CB
= 25V, I
E
= 0
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 1A
*2
I
C
= 0.5A, I
B
= 20mA
I
C
= 0.5A, I
B
= 50mA
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
200
10
1.0
*2
min
typ
max
100
Unit
nA
V
V
V
25
20
12
200
60
0.13
0.4
1.2
800
V
V
MHz
pF
Pulse measurement
*1
h
FE1
Rank classification
R
200 ~ 350
S
300 ~ 500
T
400 ~ 800
*3
R
on
Measurement circuit
1kΩ
Rank
h
FE1
I
B
=1mA
f=1kHz
V=0.3V
V
B
V
V
V
A
R
on
=
V
B
!1000(Ω)
V
A
–V
B
1