Power Transistors
P
C
— Ta
50
10
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
T
C
=25˚C
I
B
=4.0mA
2SD1276, 2SD1276A
I
C
— V
CE
10
V
CE
=3V
I
C
— V
BE
Collector power dissipation P
C
(W)
Collector current I
C
(A)
Collector current I
C
(A)
40
(1)
8
30
6
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
8
25˚C
6
T
C
=100˚C
–25˚C
20
4
4
10
(2)
(3)
(4)
2
2
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
0
0
0.8
1.6
2.4
3.2
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
100
I
C
/I
B
=250
30
10
3
1 T
C
=100˚C
–25˚C
0.3
0.1
0.03
0.01
0.01 0.03
25˚C
10
5
h
FE
— I
C
10000
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CE
=3V
I
E
=0
f=1MHz
T
C
=25˚C
Forward current transfer ratio h
FE
3000
1000
300
100
30
10
3
1
0.1
T
C
=100˚C
10
4
25˚C
–25˚C
10
3
10
2
0.1
0.3
1
3
10
10
0.01 0.03
0.1
0.3
1
3
10
0.3
1
3
10
30
100
Collector current I
C
(A)
Collector current I
C
(A)
Collector to base voltage V
CB
(V)
Area of safe operation (ASO)
100
30
10
3
Non repetitive pulse
T
C
=25˚C
R
th(t)
— t
(1) Without heat sink
(2) With a 100
×
100
×
2mm Al heat sink
(1)
Thermal resistance R
th
(t) (˚C/W)
Collector current I
C
(A)
10 I
CP
t=1ms
3 I
C
10ms
1
DC
0.3
0.1
0.03
0.01
1
3
10
30
10
2
10
(2)
1
2SD1276A
2SD1276
10
–1
100
300
1000
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
