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2SD1276 参数 Datasheet PDF下载

2SD1276图片预览
型号: 2SD1276
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面型达林顿(对于功率放大) [Silicon NPN triple diffusion planar type Darlington(For power amplification)]
分类和应用: 晶体晶体管功率双极晶体管
文件页数/大小: 2 页 / 64 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号2SD1276的Datasheet PDF文件第2页  
Power Transistors
2SD1276, 2SD1276A
Silicon NPN triple diffusion planar type Darlington
0.7±0.1
For power amplification
Complementary to 2SB950 and 2SB950A
Unit: mm
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
φ3.1±0.1
1.4±0.1
1.3±0.2
0.5
+0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
1
2
4.2±0.2
q
q
14.0±0.5
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD1276
2SD1276A
2SD1276
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
16.7±0.3
q
High foward current transfer ratio h
FE
High-speed switching
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25˚C)
Ratings
60
80
60
80
5
8
4
40
2
150
–55 to +150
Unit
V
emitter voltage 2SD1276A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
V
V
A
A
W
˚C
˚C
B
Solder Dip
4.0
7.5±0.2
s
Features
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
3
Internal Connection
C
s
Electrical Characteristics
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SD1276
2SD1276A
2SD1276
2SD1276A
2SD1276
2SD1276A
(T
C
=25˚C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 3V, I
C
= 0.5A
V
CE
= 3V, I
C
= 3A
I
C
= 3A, I
B
= 12mA
I
C
= 5A, I
B
= 20mA
V
CE
= 3V, I
C
= 3A
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 3A, I
B1
= 12mA, I
B2
= –12mA,
V
CC
= 50V
20
0.5
4
1
60
80
1000
2000
min
typ
E
max
200
200
500
500
2
Unit
µA
µA
mA
V
Forward current transfer ratio
10000
2
4
2.5
V
V
MHz
µs
µs
µs
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE2
Rank classification
Q
P
2000 to 5000 4000 to 10000
Rank
h
FE2
1