Power Transistors
2SD1264, 2SD1264A
PC — Ta
IC — VCE
IC — VBE
50
1.2
1.0
0.8
0.6
0.4
0.2
0
1.2
TC=25˚C
IB=7mA
(1) TC=Ta
(2) With a 100 × 100 × 2mm
25˚C
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
1.0
0.8
0.6
0.4
0.2
0
40
30
20
10
0
TC=100˚C
–25˚C
6mA
5mA
(1)
(2)
4mA
3mA
2mA
1mA
(3)
(4)
0
20 40 60 80 100 120 140 160
0
4
8
12
16
20
24
0
0.2
0.4
0.6
0.8
1.0
1.2
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IC
10
10000
1000
IC/IB=10
VCE=10V
VCE=5V
f=1MHz
TC=25˚C
3000
300
100
3
1
1000
TC=100˚C
TC=100˚C
25˚C
300
100
30
10
0.3
0.1
25˚C
–25˚C
30
10
3
1
–25˚C
0.03
0.01
3
1
0.3
0.1
0.01
0.03
0.1
0.3
1
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
( )
A
( )
A
( )
Collector current IC A
Collector current IC
Collector current IC
Area of safe operation (ASO)
Rth(t) — t
10
103
102
10
Non repetitive pulse
TC=25˚C
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
ICP
3
1
IC
t=0.5ms
(1)
(2)
5ms
1ms
0.3
0.1
DC
1
0.03
0.01
10–1
10–2
0.003
0.001
1
3
10
30
100 300 1000
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
V
( )
s
Collector to emitter voltage VCE
Time
t
2
PANASONIC [ PANASONIC ]
