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2SD1264 参数 Datasheet PDF下载

2SD1264图片预览
型号: 2SD1264
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面型 [Silicon NPN triple diffusion planar type]
分类和应用:
文件页数/大小: 2 页 / 48 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号2SD1264的Datasheet PDF文件第2页  
Power Transistors
2SD1264, 2SD1264A
Silicon NPN triple diffusion planar type
For low-freauency power amplification
For TV vertical deflection output
0.7±0.1
Unit: mm
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
φ3.1±0.1
1.4±0.1
1.3±0.2
0.5
+0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
1
2
3
4.2±0.2
Complementary to 2SB940 and 2SB940A
q
q
q
(T
C
=25˚C)
Ratings
200
150
180
6
3
2
30
2
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Parameter
Collector to base voltage
Collector to
2SD1264
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
emitter voltage 2SD1264A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Solder Dip
s
Absolute Maximum Ratings
14.0±0.5
4.0
High collector to emitter V
CEO
Large collector power dissipation P
C
Full-pack package which can be installed to the heat sink with
one screw
16.7±0.3
7.5±0.2
s
Features
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter
voltage
2SD1264
2SD1264A
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE1
h
FE2
V
BE
V
CE(sat)
f
T
*
Conditions
V
CB
= 200V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 50µA, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 500µA, I
C
= 0
V
CE
= 10V, I
C
= 150mA
V
CE
= 10V, I
C
= 400mA
V
CE
= 10V, I
C
= 400mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 5V, I
C
= 0.5A, f = 1MHz
min
typ
max
50
50
Unit
µA
µA
V
V
V
200
150
180
6
60
50
1
1
20
240
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
*
h
FE1
V
V
MHz
Rank classification
Q
60 to 140
P
100 to 240
Rank
h
FE1
1