Power Transistors
P
C
— Ta
Collector power dissipation P
C
(W)
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80 100 120 140 160
(2)
(3)
(1)
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
2SC5440
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
5000
25˚C
T
C
=100˚C
I
C
/I
B
=4
–25˚C
100
V
CE
=5V
h
FE
— I
C
100
4000
Forward current transfer ratio h
FE
T
C
=100˚C
3000
25˚C
10
–25˚C
2000
1000
0
0.1
1
10
100
1
0.001
0.01
0.1
1
10
100
Ambient temperature Ta (˚C)
Collector current I
C
(A)
Collector current I
C
(A)
Area of safe operation (ASO)
100
I
CP
10
I
C
10ms
t=100µs
Area of safe operation, horizontal operation ASO
35
f=64kHz, T
C
<90˚C
Area of safe operation with
respect to the single pulse
overload curve at the time of
switching ON, shutting down
by the high voltage spark,
holding down and like that,
during horizontal operation.
30
Collector current I
C
(A)
Collector current I
C
(A)
V
CEO
max.
1ms
25
1
DC
20
0.1
15
10
0.01
Non repetitive pulse
T
C
=25˚C
1
3
10
30
100
5
<1mA
0
500
1000
1500
2000
0.001
0
300
1000
Collector to emitter voltage V
CE
(V)
Collector to emitter voltage V
CE
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
