Power Transistors
2SC5440
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
15.5±0.5
4.5
10.0
s
Features
q
q
q
φ3.2±0.1
5°
26.5±0.5
3.0±0.3
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
Wide area of safe operation (ASO)
(Ta=25˚C)
Ratings
1500
1500
600
5
25
15
7.5
60
3.0
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
5°
23.4
22.0±0.5
2.0 1.2
5°
18.6±0.5
5°
5°
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
4.0
2.0±0.2
1.1±0.1
2.0
0.7±0.1
5.45±0.3
3.3±0.3
0.7±0.1
5.45±0.3
5.5±0.3
5°
1
2
3
2.0
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
= 1000V, I
E
= 0
V
CB
= 1500V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 7.5A
I
C
= 7.5A, I
B
= 1.88A
I
C
= 7.5A, I
B
= 1.88A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 7.5A, I
B1
= 1.88A, I
B2
= –3.76A
3
2.7
0.2
5
min
typ
max
50
1
50
12
3
1.5
V
V
MHz
µs
µs
Unit
µA
mA
µA
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
