Power Transistors
P
C
— Ta
12
T
C
=Ta
240
T
C
=25˚C
200
I
B
=5.0mA
4.5mA
4.0mA
3.5mA
120
3.0mA
2.5mA
80
2.0mA
1.5mA
40
1.0mA
0.5mA
0
0
40
80
120
160
200
0
0
2
4
6
8
10
12
0
0
0.2
0.4
100
2SC3943
I
C
— V
CE
120
V
CE
=5V
T
C
=100˚C
25˚C
80
–25˚C
I
C
— V
BE
Collector power dissipation P
C
(W)
10
Collector current I
C
(mA)
8
160
6
Collector current I
C
(mA)
60
4
40
2
20
0.6
0.8
1.0
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
10000
10
I
C
/I
B
=10
h
FE
— I
C
600
V
CE
=5V
f
T
— I
E
V
CB
=10V
f=10MHz
T
C
=25˚C
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
100
3000
500
3
1000
300
100
30
10
3
1
0.1
400
1
25˚C
T
C
=100˚C
–25˚C
300
0.3
25˚C
0.1
T
C
=100˚C
–25˚C
0.03
200
100
0.01
1
3
10
30
100
300
0.3
1
3
10
30
0
–1
–3
–10
–30
–100 –300 –1000
Collector current I
C
(mA)
Collector current I
C
(mA)
Emitter current I
E
(mA)
C
ob
— V
CB
6
Area of safe operation (ASO)
I
E
=0
f=1MHz
T
C
=25˚C
1000
300
I
CP
Single pulse
Ta=25˚C
t=10ms
100 I
C
100ms
30
10
3
1
0.3
DC
Collector output capacitance C
ob
(pF)
5
4
3
2
1
0
1
3
10
30
100
Collector current I
C
(A)
0.1
1
3
10
30
100
300
1000
Collector to base voltage V
CB
(V)
Collector to emitter voltage V
CE
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
