Power Transistors
2SC3943
Silicon NPN epitaxial planar type
For video amplifier
0.7±0.1
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
Unit: mm
4.2±0.2
s
Features
q
q
q
Small transition frequency f
T
Small collector output capacitance C
ob
Full-pack package which can be installed to the heat sink with
one screw
7.5±0.2
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.2
(T
C
=25˚C)
Ratings
110
100
50
3.5
300
150
8
2.0
150
–55 to +150
Unit
V
V
V
V
mA
mA
W
˚C
˚C
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CER
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
14.0±0.5
0.5
+0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(T
C
=25˚C)
Symbol
I
CEO
V
CBO
V
CER
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T1
f
T2
C
ob
Conditions
V
CE
= 35V, I
B
= 0
I
C
= 100µA, I
E
= 0
I
C
= 500µA, R
BE
= 470Ω
I
C
= 1mA, I
B
= 0
I
E
= 100µA, I
C
= 0
V
CE
= 5V, I
C
= 100mA
I
C
= 150mA, I
B
= 15mA
V
CE
= 10V, I
C
= 10mA, f = 10MHz
V
CE
= 10V, I
C
= 110mA, f = 10MHz
V
CB
= 30V, I
E
= 0, f = 1MHz
300
350
3.5
110
100
50
3.5
20
0.5
V
MHz
MHz
pF
min
typ
max
10
Unit
µA
V
V
V
V
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
