Transistor
P
C
— Ta
1.4
2SB1440
I
C
— V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
–120
Ta=25˚C
–100
I
B
=700µA
600µA
–80
500µA
–60
400µA
300µA
200µA
–20
100µA
–100
–30
–10
–3
–1
Ta=75˚C
25˚C
–25˚C
V
CE(sat)
— I
C
I
C
/I
B
=20
Collector power dissipation P
C
(W)
1.2
1.0
0.8
0.6
Collector current I
C
(mA)
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
–40
– 0.3
– 0.1
– 0.03
0.4
0.2
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
–12
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
— I
C
–100
h
FE
— I
C
I
C
/I
B
=20
10000
V
CE
=–2V
240
f
T
— I
E
V
CB
=–10V
f=200MHz
Ta=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
Transition frequency f
T
(MHz)
–3
–10
–30
–10
–3
25˚C
–1
Ta=–25˚C
75˚C
Forward current transfer ratio h
FE
3000
1000
300
Ta=75˚C
100
–25˚C
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3
25˚C
200
160
120
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
80
40
0
–1
1
3
10
30
100
–1
–3
–10
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
— V
CB
120
Collector output capacitance C
ob
(pF)
100
I
E
=0
f=1MHz
Ta=25˚C
80
60
40
20
0
–1
–3
–10
–30
–100
Collector to base voltage V
CB
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
