Transistor
2SB1440
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD2185
Unit: mm
s
Features
q
q
4.5±0.1
1.6±0.2
1.5±0.1
Low collector to emitter saturation voltage V
CE(sat)
.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
2.6±0.1
0.4max.
45°
1.0
–0.2
+0.1
0.4±0.08
4.0
–0.20
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
(Ta=25˚C)
Ratings
–50
–50
–5
–3
–2
1
*
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
0.5±0.08
1.5±0.1
3.0±0.15
3
2
1
0.4±0.04
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
marking
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol :
1I
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= –10µA, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –2V, I
C
= –200mA
V
CE
= –2V, I
C
= –1A
I
C
= –1A, I
B
= –50mA
I
C
= –1A, I
B
= –50mA
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–50
–50
–5
120
60
– 0.2
– 0.85
80
45
60
– 0.3
–1.2
V
V
MHz
pF
340
typ
max
Unit
V
V
V
*
h
FE1
Rank classification
R
120 ~ 240
S
170 ~ 340
Rank
h
FE1
2.5±0.1
+0.25
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
