Power Transistors
2SB1175
Silicon PNP epitaxial planar type
For voltage switching
Complementary to 2SD1745
■
Features
•
Low collector-emitter saturation voltage V
CE(sat)
•
Satisfactory linearity of forward current transfer ratio h
FE
•
Large collector current I
C
•
I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
12.6
±0.3
7.2
±0.3
(1.0)
(1.0)
Unit: mm
7.0
±0.3
3.0
±0.2
2.0
±0.2
3.5
±0.2
0˚ to 0.15˚
2.5
±0.2
1.1
±0.1
1.0
±0.2
0.75
±0.1
0.4
±0.1
2.3
±0.2
4.6
±0.4
0.9
±0.1
0˚ to 0.15˚
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
−130
−80
−7
−4
−8
15
1.3
150
−55
to
+150
°C
°C
Unit
V
V
V
A
A
W
1
2
3
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
I
CBO
I
EBO
h
FE1
h
FE2 *
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
I
C
= −10
mA, I
B
=
0
V
CB
= −100
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −2
V, I
C
= −
0.1 A
V
CE
= −2
V, I
C
= −1
A
I
C
= −3
A, I
B
= −
0.15 A
I
C
= −3
A, I
B
= −
0.15 A
V
CE
= −10
V, I
C
= −
0.5 A, f
=
10 MHz
I
C
= −1
A, I
B1
= −
0.1 A, I
B2
=
0.1 A
V
CC
= −50
V
30
0.15
0.8
0.15
45
90
260
−
0.5
−1.5
V
V
MHz
µs
µs
µs
Min
−80
−10
−50
Typ
Max
Unit
V
µA
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
Q
90 to 180
P
130 to 260
2.5
±0.2
Publication date: March 2003
SJD00051AED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
