2SB1172, 2SB1172A
P
C
T
a
20
I
C
V
CE
−6
−10
T
C
=25˚C
I
C
V
BE
V
CE
=–4V
Collector power dissipation P
C
(W)
(1)T
C
=Ta
(2)Without heat sink
(P
C
=1.3W)
−5
−8
–80mA
–60mA
Collector current I
C
(A)
−4
Collector current I
C
(A)
15
I
B
=–100mA
−6
25˚C
10
(1)
−3
–40mA
–30mA
–20mA
−4
T
C
=100˚C
–25˚C
−2
5
−1
(2)
0
–16mA
–12mA
–8mA
–4mA
−2
0
0
40
80
120
160
0
−2
−4
−6
−8
−10
−12
0
0
−
0.4
−
0.8
−1.2
−1.6
−2.0
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/I
B
=10
h
FE
I
C
10
4
f
T
I
C
V
CE
=–4V
10
4
V
CE
=–5V
f=10MHz
T
C
=25˚C
Forward current transfer ratio h
FE
−10
Transition frequency f
T
(MHz)
10
3
25˚C
T
C
=100˚C
10
3
−1
10
2
–25˚C
10
2
T
C
=100˚C
–25˚C
25˚C
−
0.1
10
10
−
0.01
−
0.01
−
0.1
−1
−10
1
−
0.01
−
0.1
−1
−10
1
−
0.01
−
0.1
−1
−10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Safe operation area
−100
Non repetitive pulse
T
C
=25˚C
R
th
t
10
3
(1)Without heat sink
(2)With a 50×50×2mm Al heat sink
Collector current I
C
(A)
−10
I
CP
I
C
t=1ms
t=10ms
t=300ms
Thermal resistance R
th
(°C/W)
10
2
(1)
(2)
−1
10
−
0.1
2SB1172A
2SB1172
1
−
0.01
−1
−10
−100
−1
000
10
−1
10
−4
10
−3
10
−2
10
−1
1
10
10
2
10
3
10
4
Collector-emitter voltage V
CE
(V)
Time t (s)
2
SJD00048AED
PANASONIC [ PANASONIC SEMICONDUCTOR ]
